Part number:
NX6508
Manufacturer:
CEL
File Size:
335.83 KB
Description:
Laser diode.
* OPTICAL OUTPUT POWER PO = 5.0 mW
* PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm (Based on ITU-T recommendations)
* LOW THRESHOLD CURRENT Ith = 10 mA
* HIGH SPEED tr = 100 ps MAX
* SIDE MODE SUPPRESSION RATIO SMSR = 40 dB
* OPERATING CASE TEMPERATU
NX6508
CEL
335.83 KB
Laser diode.
📁 Related Datasheet
NX6504 - LASER DIODE
(CEL)
NEC's1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6504 Series FOR FIBER OPTIC COMMUNICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0 mW • LO.
NX6506 - LASER DIODE
(CEL)
NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.
NX6509 - LASER DIODE
(CEL)
PRELIMINARY DATA SHEET
NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: .
NX6514EH - LASER DIODE
(California Eastern Labs)
A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6514EH
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P .
NX6008NBK - N-channel MOSFET
(nexperia)
NX6008NBK
60 V, N-channel Trench MOSFET
19 August 2021
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor .
NX6008NBKS - dual N-channel MOSFET
(nexperia)
NX6008NBKS
60 V, dual N-channel Trench MOSFET
19 August 2021
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect .
NX6020CAKS - N/P-channel MOSFET
(nexperia)
NX6020CAKS
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET
18 January 2018
Product data sheet
1. General description
Complementary N/P-chan.
NX6240GP - LASER DIODE
(California Eastern Labs)
A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6240GP
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU .
