NX6508 Datasheet - CEL

LASER DIODE

NX6508 Features

* OPTICAL OUTPUT POWER PO = 5.0 mW

* PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm (Based on ITU-T recommendations)

* LOW THRESHOLD CURRENT Ith = 10 mA

* HIGH SPEED tr = 100 ps MAX

* SIDE MODE SUPPRESSION RATIO SMSR = 40 dB

* OPERATING CASE TEMPERATU

NX6508 General Description

NEC's NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. These devices are ideal for 2.5 Gb/s CWDM application. ELECTRO-OPTICAL CHARACTERISTICS (TC = -20 to +85°C, unless otherwise speciﬁed) PART NUMBER SYMB.

NX6508 Datasheet (335.83 KB)

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NX6508

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CEL

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335.83 KB

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Laser diode.

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NX6508 LASER DIODE CEL

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NX6508 Features

NX6508 General Description

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