CEM6080 Datasheet, transistor equivalent, CET

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Part number: CEM6080

Manufacturer: CET

File Size: 461.20KB

Download: 📄 Datasheet

Description: Dual Enhancement Mode Field Effect Transistor

CEM6080 Features and benefits

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CEM6086 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6086 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 12A, RDS(ON) = 11.5mΩ @VGS = 10V. Super high dense cell design.

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CEM6088L - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6088L Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS.

CEM6056 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely.

CEM6056L - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM6056L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 14.5A, RDS(ON) = 7.8 mΩ @VGS = 10V. RDS(ON) = 10 mΩ @VGS = 4.5V. Super high.

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CEM6188 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
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CEM6200 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V..

CEM6338 - Dual N-Channel MOSFET (CET)
CEM6338 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 5.2A, RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high.