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CEM6601 P-Channel Enhancement Mode Field Effect Transistor

CEM6601 Description

P-Channel Enhancement Mode Field Effect Transistor .

CEM6601 Features

* -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 CEM6601 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RA

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Datasheet Details

Part number
CEM6601
Manufacturer
CET
File Size
344.80 KB
Datasheet
CEM6601_CET.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor CET
CET CEM6601-like datasheet