CEM6601 Datasheet - CET

CEM6601 P-Channel Enhancement Mode Field Effect Transistor

CEM6601 Features

* -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 CEM6601 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RA

CEM6601_CET.pdf

CEM6601 Datasheet Preview — Preview of CEM6601 PDF

Datasheet Details

Part number:

CEM6601

Manufacturer:

CET

File Size:

344.80 KB

Description:

P-channel enhancement mode field effect transistor.

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CEM6601 CEM6601 P-Channel Enhancement Mode Field Effect Transistor CET

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