Part number:
CEM6607
Manufacturer:
CET
File Size:
345.16 KB
Description:
Dual p-channel enhancement mode field effect transistor.
* -60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 CEM6607 5 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE M
CEM6607
CET
345.16 KB
Dual p-channel enhancement mode field effect transistor.
📁 Related Datasheet
CEM6600 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6601 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6659 Dual Enhancement Mode Field Effect Transistor (CET)
CEM6056 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6056L N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM6080 Dual Enhancement Mode Field Effect Transistor (CET)
CEM6086 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6086L N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6088 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
