CEM6607 Datasheet - CET

CEM6607 Dual P-Channel Enhancement Mode Field Effect Transistor

CEM6607 Features

* -60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 CEM6607 5 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE M

CEM6607_CET.pdf

CEM6607 Datasheet Preview — Preview of CEM6607 PDF

Datasheet Details

Part number:

CEM6607

Manufacturer:

CET

File Size:

345.16 KB

Description:

Dual p-channel enhancement mode field effect transistor.

📁 Related Datasheet

CEM6600 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6601 P-Channel Enhancement Mode Field Effect Transistor (CET)

CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6659 Dual Enhancement Mode Field Effect Transistor (CET)

CEM6056 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6056L N-Channel Enhancement Mode Field Effect Transistor (CET)

CEM6080 Dual Enhancement Mode Field Effect Transistor (CET)

CEM6086 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

TAGS

CEM6607 CEM6607 Dual P-Channel Enhancement Mode Field Effect Transistor CET

CEM6607 Distributor