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CEM6607 Dual P-Channel Enhancement Mode Field Effect Transistor

CEM6607 Description

Dual P-Channel Enhancement Mode Field Effect Transistor .

CEM6607 Features

* -60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 CEM6607 5 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE M

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Datasheet Details

Part number
CEM6607
Manufacturer
CET
File Size
342.42 KB
Datasheet
CEM6607_CET.pdf
Description
Dual P-Channel Enhancement Mode Field Effect Transistor

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Dual P-Channel Enhancement Mode Field Effect Transistor CET
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