Part number: CEM6086
Manufacturer: Chino-Excel Technology
File Size: 363.33KB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode Field Effect Transistor
60V, 12A, RDS(ON) = 11.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. S.
Image gallery
TAGS
📁 Related Datasheet
CEM6080 - Dual Enhancement Mode Field Effect Transistor
(CET)
CEM6080
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -6.
CEM6086L - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6086L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 12A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V.
S.
CEM6088 - Dual N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6088
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. Super high dense cell .
CEM6088L - Dual N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6088L
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS.
CEM6056 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6056
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely.
CEM6056L - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM6056L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 14.5A, RDS(ON) = 7.8 mΩ @VGS = 10V. RDS(ON) = 10 mΩ @VGS = 4.5V.
Super high.
CEM6186 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6186
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 8A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
Sup.
CEM6188 - Dual N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6188
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 7.3A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4..
CEM6200 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V..
CEM6338 - Dual N-Channel MOSFET
(CET)
CEM6338
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 5.2A, RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V.
Super high.