CEM6355 Datasheet, p- equivalent, CET

CEM6355 Features

• P- -60V, -6A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product

PDF File Details

Part number:

CEM6355

Manufacturer:

CET

File Size:

353.28kb

Download:

📄 Datasheet

Description:

P-.

TAGS

📁 Related Datasheet

CEM6338 - Dual N-Channel MOSFET (CET)
CEM6338 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 5.2A, RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high.

CEM6056 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely.

CEM6056L - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM6056L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 14.5A, RDS(ON) = 7.8 mΩ @VGS = 10V. RDS(ON) = 10 mΩ @VGS = 4.5V. Super high.

CEM6080 - Dual Enhancement Mode Field Effect Transistor (CET)
CEM6080 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -6.

CEM6086 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6086 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 12A, RDS(ON) = 11.5mΩ @VGS = 10V. Super high dense cell design.

CEM6086L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 12A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. S.

CEM6088 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6088 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. Super high dense cell .

CEM6088L - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6088L Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS.

CEM6186 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6186 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 8A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Sup.

CEM6188 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6188 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 7.3A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4..