Datasheet4U Logo Datasheet4U.com

CEM6200

N-Channel Enhancement Mode Field Effect Transistor

CEM6200 Features

* 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

CEM6200 Datasheet (402.30 KB)

Preview of CEM6200 PDF

Datasheet Details

Part number:

CEM6200

Manufacturer:

Chino-Excel Technology

File Size:

402.30 KB

Description:

N-channel enhancement mode field effect transistor.

📁 Related Datasheet

CEM6056 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6056L N-Channel Enhancement Mode Field Effect Transistor (CET)

CEM6080 Dual Enhancement Mode Field Effect Transistor (CET)

CEM6086 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6086L N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6088 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6088L Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6186 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6188 Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEM6338 Dual N-Channel MOSFET (CET)

TAGS

CEM6200 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

Image Gallery

CEM6200 Datasheet Preview Page 2 CEM6200 Datasheet Preview Page 3

CEM6200 Distributor