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CEM6659 Dual Enhancement Mode Field Effect Transistor

CEM6659 Description

CEM6659 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY .

CEM6659 Features

* 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1

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Datasheet Details

Part number
CEM6659
Manufacturer
CET
File Size
306.51 KB
Datasheet
CEM6659-CET.pdf
Description
Dual Enhancement Mode Field Effect Transistor

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Dual Enhancement Mode Field Effect Transistor CET
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