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CEM6600

N-Channel Enhancement Mode Field Effect Transistor

CEM6600 Features

* 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot

CEM6600 Datasheet (364.71 KB)

Preview of CEM6600 PDF

Datasheet Details

Part number:

CEM6600

Manufacturer:

Chino-Excel Technology

File Size:

364.71 KB

Description:

N-channel enhancement mode field effect transistor.

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CEM6600 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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