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CEM6600, CEM6600-Chino Datasheet - Chino-Excel Technology

CEM6600 N-Channel Enhancement Mode Field Effect Transistor

CEM6600 Features

* 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot

CEM6600-Chino-ExcelTechnology.pdf

CEM6600 Datasheet Preview — This datasheet PDF includes multiple part numbers: CEM6600, CEM6600-Chino. Please refer to the document for exact specifications by model.

CEM6600 Datasheet Preview Page 2

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Datasheet Details

Part number:

CEM6600, CEM6600-Chino

Manufacturer:

Chino-Excel Technology

File Size:

364.71 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: CEM6600, CEM6600-Chino.
Please refer to the document for exact specifications by model.

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TAGS

CEM6600 CEM6600-Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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