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CEM6608, CEM6608-Chino Dual N-Channel Enhancement Mode Field Effect Transistor

CEM6608 Description

CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor .

CEM6608 Features

* 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: CEM6608, CEM6608-Chino. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
CEM6608, CEM6608-Chino
Manufacturer
Chino-Excel Technology
File Size
306.64 KB
Datasheet
CEM6608-Chino-ExcelTechnology.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: CEM6608, CEM6608-Chino.
Please refer to the document for exact specifications by model.

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📌 All Tags

Dual N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
Chino-Excel Technology CEM6608-like datasheet