CS180N06A8 - Silicon N-Channel Power MOSFET
CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher effi
CS180N06A8 Features
* VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 V 180 A 245 W 3.2 mΩ
* Fast Switching
* Low ON Resistance(Rdson≤4mΩ)
* Low Gate Charge (Typical Data:86.2nC)
* Low Reverse transfer capacitances(Typical:342pF)
* 100% Single Pulse avalanche energy Test Applications：
