CS180N06A8 Datasheet - CR Micro

CS180N06A8, Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS180N06 A8 General .
CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching.

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CS180N06A8-CRMicro.pdf

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Datasheet Details

Part number:

CS180N06A8

Manufacturer:

CR Micro

File Size:

585.29 KB

Description:

Silicon N-Channel Power MOSFET

Features

* VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 V 180 A 245 W 3.2 mΩ
* Fast Switching
* Low ON Resistance(Rdson≤4mΩ)
* Low Gate Charge (Typical Data:86.2nC)
* Low Reverse transfer capacitances(Typical:342pF)

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avala

CS180N06A8 Distributors

📁 Related Datasheet

CS18-05N-1 CS18-05N-2 CS18-05P-1 CS18-08N-1 CS18-08N-2 CS18-08P-1

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CS180N06A8 Silicon N-Channel Power MOSFET CR Micro

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