CS180N10A8 - Silicon N-Channel Power MOSFET
CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) 100 180 120 312
CS180N10A8 Features
* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:418pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2
