CS180N10A8 Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS180N10 A8 General .
CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching.

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Datasheet Specifications

Part number: CS180N10A8
Manufacturer: CR Micro
File Size: 408.55 KB
Datasheet: CS180N10A8-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C（Silicon limited） Continuous Drain Current TC = 25 °C（Package limited） Continuous Drain Cu

CS180N10A8 Distributors

📁 Related Datasheet

CS18-05N-1 CS18-05N-2 CS18-05P-1 CS18-08N-1 CS18-08N-2 CS18-08P-1

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CS180N10A8 Silicon N-Channel Power MOSFET CR Micro

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