CS180N10A8

Silicon N-Channel Power MOSFET

CR Micro

CS180N10A8 Features

* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:418pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2

CS180N10A8 General Description

CS180N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) 100 180 120 312.

CS180N10A8 Datasheet (408.55 KB)

CS180N10A8 Datasheet Preview — Preview of CS180N10A8 PDF

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CS180N10A8

Manufacturer:

CR Micro

File Size:

408.55 KB

Description:

Silicon n-channel power mosfet.

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CS180N10A8 Silicon N-Channel Power MOSFET CR Micro

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CS180N10A8 Features

CS180N10A8 General Description

Datasheet Details

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