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CS180N10A0

Silicon N-Channel Power MOSFET

CS180N10A0 Features

* Fast Switching

* Low ON Resistance

* Low Gate Charge

* Low Reverse transfer capacitances(Typical:418pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS

CS180N10A0 General Description

CS180N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) 100 180 120 312.

CS180N10A0 Datasheet (659.71 KB)

Preview of CS180N10A0 PDF

Datasheet Details

Part number:

CS180N10A0

Manufacturer:

CR Micro

File Size:

659.71 KB

Description:

Silicon n-channel power mosfet.

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CS180N10A0 Silicon N-Channel Power MOSFET CR Micro

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