CS18N20A3R - Silicon N-Channel Power MOSFET
CS18N20 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 V 18 A 100 W 0.12 Ω performance and enhance the avalanche energy.
The transistor can be used in v
CS18N20A3R Features
* Fast Switching
* Low ON Resistance(Rdson≤0.18Ω)
* Low Gate Charge (Typical Data:20.4nC)
* Low Reverse transfer capacitances(Typical:16.4pF)
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherw
