CS18N50A8R - Silicon N-Channel Power MOSFET
CS18N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS18N50A8R Features
* l Fast Switching l Low ON Resistance(Rdson≤0.35Ω) l Low Gate Charge (Typical Data: 45.7nC) l Low Reverse transfer capacitances(Typical:5.97 pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol
