CS18N20A4RZ-G
CR Micro
621.90kb
Silicon n-channel power mosfet. CS18N20 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the cond
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CS18N20A4R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS18N20 A4R
General Description:
CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
CS18N20A3R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS18N20 A3R
General Description:
CS18N20 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
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(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
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General Description:
CS18N20 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self.
CS18N20FA9R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
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CS18N20F A9R
General Description:
CS18N20F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the se.
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(Central Semiconductor)
CS18B CS18D CS18M CS18N
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w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICOND.
CS18N50A8R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
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General Description:
CS18N50 A8R, the silicon N-channel Enhanced
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CS18-05N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-05N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-05P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-08N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.