CS18N20A4RZ-G Datasheet - CR Micro

CS18N20A4RZ-G, Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS18N20 A4RZ-G General .
CS18N20 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, impr.

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Datasheet Details

Part number:

CS18N20A4RZ-G

Manufacturer:

CR Micro

File Size:

621.90 KB

Description:

Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.18Ω)
* Low Gate Charge (Typical Data:20.4nC)
* Low Reverse transfer capacitances(Typical:16.4pF)
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source

CS18N20A4RZ-G Distributors

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CS18N20A4RZ-G Silicon N-Channel Power MOSFET CR Micro

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