CS18N20A4RZ-G - Silicon N-Channel Power MOSFET
CS18N20 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturizatio
CS18N20A4RZ-G Features
* Fast Switching
* Low ON Resistance(Rdson≤0.18Ω)
* Low Gate Charge (Typical Data:20.4nC)
* Low Reverse transfer capacitances(Typical:16.4pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（T
