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CS18N20A8R

Silicon N-Channel Power MOSFET

CS18N20A8R Features

* l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol P

CS18N20A8R General Description

CS18N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS18N20A8R Datasheet (392.93 KB)

Preview of CS18N20A8R PDF

Datasheet Details

Part number:

CS18N20A8R

Manufacturer:

Huajing Microelectronics

File Size:

392.93 KB

Description:

Silicon n-channel power mosfet.

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CS18N20A8R Silicon N-Channel Power MOSFET Huajing Microelectronics

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