CS18N20A8R - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS18N20A8R Datasheet Preview — Preview of CS18N20A8R PDF

Datasheet Details

Part number	CS18N20A8R
Manufacturer	Huajing Microelectronics
File Size	392.93 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS18N20A8R-HuajingMicroelectronics.pdf

CS18N20A8R Product details

Description

CS18N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanche energy Test.

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Published: Oct 25, 2024 |