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HGP022N04B-G Datasheet - CR Micro

Silicon N-Channel Power MOSFET

HGP022N04B-G Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. 40 V 200 A 120 A 150.6 W 1.7 mΩ Absolute（Tj= 25℃ unless otherwise specified

HGP022N04B-G General Description

HGP022N04B-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID (Silicon Limited) ID(Package Limited) PD RDS(ON)Typ suitable for use a.

HGP022N04B-G Datasheet (481.49 KB)

Preview of HGP022N04B-G PDF

Datasheet Details

Part number:

HGP022N04B-G

Manufacturer:

CR Micro

File Size:

481.49 KB

Description:

Silicon n-channel power mosfet.

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HGP022N04B-G Silicon N-Channel Power MOSFET CR Micro

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