CTH3506NS-T52 N-Channel MOSFET

CT Micro

Description

CTH3506NS-T52 N-Channel Enhancement MOSFET .
The CTH3506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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CTH3506NS-T52 Datasheet Preview — Preview of CTH3506NS-T52 PDF

Datasheet Specifications

Part number: CTH3506NS-T52
Manufacturer: CT Micro
File Size: 959.44 KB
Datasheet: CTH3506NS-T52-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 60V
* Drain-Source On-Resistance RDS(ON) 17m, at VGS= 10V, ID= 30A
* Continuous Drain Current at TC=25℃ID =35.1A
* Advanced high cell density Trench Technology

Applications

* DC/DC Converter
* Power Management
* CCFL inverter Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH3506NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Dra

CTH3506NS-T52 Distributors

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CTH3506NS-T52 N-Channel MOSFET CT Micro

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