CTH3904NS-T52 N-Channel MOSFET

CT Micro

Description

CTH3904NS-T52 N-Channel Enhancement MOSFET .
The CTH3904NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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CTH3904NS-T52 Datasheet Preview — Preview of CTH3904NS-T52 PDF

Datasheet Specifications

Part number: CTH3904NS-T52
Manufacturer: CT Micro
File Size: 1.03 MB
Datasheet: CTH3904NS-T52-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 40V
* Drain-Source On-Resistance RDS(ON) 9m, at VGS= 10V, ID= 15A RDS(ON) 13m, at VGS= 4.5V, ID= 13A
* Continuous Drain Current at TC=25℃ID 39A
* Advanced high cell density Trench Technology

Applications

* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH3904NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rat

CTH3904NS-T52 Distributors

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CTH3904NS-T52 N-Channel MOSFET CT Micro

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