CTH3904NS-T52 Datasheet, Mosfet, CT Micro

CTH3904NS-T52 Features

  • Mosfet
  • Drain-Source Breakdown Voltage VDSS 40V
  • Drain-Source On-Resistance RDS(ON) 9m, at VGS= 10V, ID= 15A RDS(ON) 13m, at VGS= 4.5V, ID= 13A
  • Continuous Drain C

PDF File Details

Part number:

CTH3904NS-T52

Manufacturer:

CT Micro

File Size:

1.03MB

Download:

📄 Datasheet

Description:

N-channel mosfet. The CTH3904NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS t

Datasheet Preview: CTH3904NS-T52 📥 Download PDF (1.03MB)
Page 2 of CTH3904NS-T52 Page 3 of CTH3904NS-T52

CTH3904NS-T52 Application

  • Applications
  • Power Management
  • DC/DC Converter
  • LCD TV & Monitor Display inverter
  • CCFL inverter Package Outli

TAGS

CTH3904NS-T52
N-Channel
MOSFET
CT Micro

📁 Related Datasheet

CTH3903NS-T52 - N-Channel MOSFET (CT Micro)
CTH3903NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 11m, at VGS= 10V,.

CTH3506NS-T52 - N-Channel MOSFET (CT Micro)
CTH3506NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 17m, at VGS= 10V,.

CTH10003NS-T52 - N-Channel MOSFET (CT Micro)
CTH10003NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10.

CTH11055NS - N-Channel MOSFET (CT Micro)
CTH11055NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 55V  Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= .

CTH1606NS-T52 - N-Channel MOSFET (CT Micro)
CTH1606NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V,.

CTH1706PS-T52 - P-Channel MOSFET (CT Micro)
CTH1706PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-60V  Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V.

CTH1804PS-T52 - P-Channel MOSFET (CT Micro)
CTH1804PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-40V  Drain-Source On-Resistance RDS(ON) 35m, at VGS= -10V.

CTH214 - Phototransistor Optocoupler (CT Micro)
.ct-micro. CTH214 Series AC Input 4-Pin Half Pitch Mini-Flat DMC-Isolator® Phototransistor Optocoupler Features Description • High isolation.

CTH217 - Phototransistor Optocoupler (CT Micro)
.ct-micro. CTH217 Series DC Input 4-Pin Half Pitch Mini-Flat DMC-Isolator® Phototransistor Optocoupler Features Description • High isolation.

CTH217A - Phototransistor Optocoupler (CT Micro)
.ct-micro. CTH217 Series DC Input 4-Pin Half Pitch Mini-Flat DMC-Isolator® Phototransistor Optocoupler Features Description • High isolation.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts