CTH4106NS-T52 N-Channel MOSFET

CT Micro

Description

CTH4106NS-T52 N-Channel Enhancement MOSFET .
The CTH4106NS. T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the s.

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Datasheet Specifications

Part number: CTH4106NS-T52
Manufacturer: CT Micro
File Size: 1.04 MB
Datasheet: CTH4106NS-T52-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS = 60V
* Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A
* Continuous Drain Current at TC=25℃ID = 41A
* Advanced high cell density Trench Technology

Applications

* . Applications
* Notebook
* High side switching
* Power Management Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH4106NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Param

CTH4106NS-T52 Distributors

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CTH4106NS-T52 N-Channel MOSFET CT Micro

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