Description
CTL0502NS N-Channel Enhancement MOSFET .
The CTL0502NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.
Features
* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A
* Continuous Drain Current at TC=25℃ID = 5.0A
* Advanced high cell density Trench Technology
* Ro
Applications
* Applications
* Power Management
* Lithium Ion Battery
Package Outline
Pin 2
Schematic
Drain
Pin 1
Pin 3
CT Micro Proprietary & Confidential
Gate
Gate: Drain: Source:
Source
Pin 1 Pin 2 Pin 3
Page 1
Rev 1 Aug, 2013
CTL0502NS N-Channel Enhancement MOSFET
Absolute Maximum Rating a
