CTL0502NS-R3 N-Channel MOSFET

CT Micro

Description

CTL0502NS-R3 N-Channel Enhancement MOSFET .
The CTL0502NS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronou.

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Datasheet Specifications

Part number: CTL0502NS-R3
Manufacturer: CT Micro
File Size: 766.67 KB
Datasheet: CTL0502NS-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance RDS(ON) 21mΩ, at VGS= 4.5V, ID= 5.0A RDS(ON) 24mΩ, at VGS= 2.5V, ID= 3.5A RDS(ON) 31mΩ, at VGS= 1.8V, ID= 2.8A ℃
* Continuous Drain Current at TA=25 ,ID = 5.0A
* Advanced high cell density Trench T

Applications

* Applications
* Power Management
* Lithium Ion Battery Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTL0502NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters

CTL0502NS-R3 Distributors

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CTL0502NS-R3 N-Channel MOSFET CT Micro

CT Micro CTL0502NS-R3-like datasheet