CTL0642NS-R3 N-Channel MOSFET

CT Micro

CTL0642NS-R3 Description

CTL0642NS-R3 N-Channel Enhancement MOSFET .
The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

CTL0642NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A ℃
* Continuous Drain Current at TA=25 ID = 6.4A
* Advanced high cell density Trench

CTL0642NS-R3 Applications

* Power Management
* Battery Powered System
* Portable Equipment

📥 Download Datasheet

CTL0642NS-R3 Datasheet Preview — Preview of CTL0642NS-R3 PDF

Datasheet Details

Part number: CTL0642NS-R3
Manufacturer: CT Micro
File Size: 1.96 MB
Datasheet: CTL0642NS-R3-CTMicro.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET CT Micro

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