CTL0642NS-R3 Datasheet (CT Micro)

CTL0642NS-R3, N-Channel MOSFET

The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Schematic Drain Drain Gate Source Gate Source CT Micro Propri

CTL0642NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 20 V

* Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A ℃

* Continuous Drain Current at TA=25 ID = 6.4A

* Advanced high cell density Trench