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CTL0642NS-R3 - N-Channel MOSFET

CT Micro

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Datasheet Details

Part number	CTL0642NS-R3
Manufacturer	CT Micro
File Size	1.96 MB
Description	N-Channel MOSFET
Datasheet	CTL0642NS-R3-CTMicro.pdf

CTL0642NS-R3 Product details

Description

The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

Drain-Source Breakdown Voltage VDSS 20 V.
Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A ℃.
Continuous Drain Current at TA=25 ID = 6.4A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.
ESD protection.

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Published: May 20, 2020 |