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CTL0642NS-R3

N-Channel MOSFET

CTL0642NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 20 V

* Drain-Source On-Resistance RDS(ON) 17mΩ, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20mΩ, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25mΩ, at VGS= 1.8V, IDS= 5.0A ℃

* Continuous Drain Current at TA=25 ID = 6.4A

* Advanced high cell density Trench

CTL0642NS-R3 General Description

The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Schematic Drain Drain Gate Source Gate Source CT Micro Propri.

CTL0642NS-R3 Datasheet (1.96 MB)

Preview of CTL0642NS-R3 PDF

Datasheet Details

Part number:

CTL0642NS-R3

Manufacturer:

CT Micro

File Size:

1.96 MB

Description:

N-channel mosfet.

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TAGS

CTL0642NS-R3 N-Channel MOSFET CT Micro

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