* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package Symbol MTB09N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping
MTB09N06I3 Datasheet (337.45 KB)
MTB09N06I3
CYStech Electronics
337.45 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOS.
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