MTB09N06I3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Description

CYStech Electronics Corp.Spec.No.: C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No.: 1/ 8 N-Channel Enhancement Mode Power MOS.

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Datasheet Specifications

Part number: MTB09N06I3
Manufacturer: CYStech Electronics
File Size: 337.45 KB
Datasheet: MTB09N06I3-CYStechElectronics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package Symbol MTB09N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB09N06I3 CYStek

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MTB09N06I3 N-Channel Enhancement Mode Power MOSFET CYStech Electronics

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