* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package RDSON(TYP) @ VGS=4.5V, ID=20A 60V 60A 11A 6.4mΩ 7.8mΩ Symbol MTB09N06FP Outline TO-220FP G：Gate D：Drain S：Source GDS Order
MTB09N06FP Datasheet (357.99 KB)
MTB09N06FP
Cystech Electonics
357.99 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB09N06.
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