Datasheet4U Logo Datasheet4U.com

MTP2611V8 P-Channel Enhancement Mode MOSFET

MTP2611V8 Description

CYStech Electronics Corp.P-Channel Enhancement Mode MOSFET Spec.No.: C913V8 Issued Date : 2013.07.08 Revised Date : 2013.10.30 Page No.: 1/9 MTP.

MTP2611V8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-15.3A RDSON@VGS=-2.5V, ID=-13.1A -20V -45A 8.8mΩ(typ) 12.8mΩ(typ) Equivalent Circuit MTP2611V8 Outline DFN3×3 Pin 1

MTP2611V8 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2611V8 CYStek Product Specification

📥 Download Datasheet

Preview of MTP2611V8 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTP2611V8
Manufacturer
CYStech Electronics
File Size
366.13 KB
Datasheet
MTP2611V8-CYStechElectronics.pdf
Description
P-Channel Enhancement Mode MOSFET

📁 Related Datasheet

  • MTP20N06V - TMOS POWER FET (Motorola)
  • MTP20N08 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • MTP20N10 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • MTP20N15E - N-Channel Power MOSFET (ON Semiconductor)
  • MTP20N20E - TMOS POWER FET (Motorola)
  • MTP20P06 - Power Field Effect Transistor (Motorola Semiconductor)
  • MTP2301S3 - 20V P-Channel Enhancement Mode MOSFET (CYStech)
  • MTP23N05L - Power Field Effect Transistor (Motorola)

📌 All Tags

CYStech Electronics MTP2611V8-like datasheet