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BTC3906N3G General Purpose NPN Epitaxial Planar Transistor

BTC3906N3G Description

CYStech Electronics Corp.General Purpose NPN Epitaxial Planar Transistor BTC3906N3G Spec.No.: C208N3G Issued Date : 2008.12.11 Revised Date : Page.
The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage. High collector-emitter breakdown vol.

BTC3906N3G Features

* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTA1514N3G
* Pb-free and Halogen-free package Symbol BTC3906N3G Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitt

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Datasheet Details

Part number
BTC3906N3G
Manufacturer
CYStech
File Size
144.83 KB
Datasheet
BTC3906N3G-CYStech.pdf
Description
General Purpose NPN Epitaxial Planar Transistor

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General Purpose NPN Epitaxial Planar Transistor CYStech
CYStech BTC3906N3G-like datasheet