* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=3.4A VGS=4.5V, ID=3.3A 150V 16A 4.2A 45mΩ 50mΩ Symbol MTB050N15BR
MTB050N15BRH8 Datasheet (833.73 KB)
MTB050N15BRH8
CYStech
833.73 KB
N-channel power mosfet.
CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2018.03.09 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB050N.
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