Datasheet4U Logo Datasheet4U.com

MTB050P10J3 Datasheet - Cystech Electonics

MTB050P10J3 P-Channel Enhancement Mode Power MOSFET

MTB050P10J3 Features

* RDS(ON)@VGS=-4.5V, ID=-12A

* Single Drive Requirement

* Low On-resistance

* Fast switching Characteristic

* Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) G:Gate D:Drain S:

MTB050P10J3 Datasheet (345.78 KB)

Preview of MTB050P10J3 PDF
MTB050P10J3 Datasheet Preview Page 2 MTB050P10J3 Datasheet Preview Page 3

Datasheet Details

Part number:

MTB050P10J3

Manufacturer:

Cystech Electonics

File Size:

345.78 KB

Description:

P-channel enhancement mode power mosfet.

📁 Related Datasheet

MTB050P10E3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB050P10F3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB050P10H8 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB050N10KRQ8 N-Channel Power MOSFET (CYStech)

MTB050N15ARJ3 N-Channel Power MOSFET (CYStech)

MTB050N15BRH8 N-Channel Power MOSFET (CYStech)

MTB050N15BRQ8 N-Channel Power MOSFET (CYStech)

MTB050N15BRV8 N-Channel Enhancement Mode Power MOSFET (CYStech)

TAGS

MTB050P10J3 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

MTB050P10J3 Distributor