MTB050P10J3 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C975J3 Issued Date : 2015.03.17 Revised Date : Page No.: 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P.

📥 Download Datasheet

MTB050P10J3 Datasheet Preview — Preview of MTB050P10J3 PDF

Datasheet Specifications

Part number: MTB050P10J3
Manufacturer: Cystech Electonics
File Size: 345.78 KB
Datasheet: MTB050P10J3-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)@VGS=-4.5V, ID=-12A
* Single Drive Requirement
* Low On-resistance
* Fast switching Characteristic
* Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) G：Gate D：Drain S：

MTB050P10J3 Distributors

📁 Related Datasheet

MTB050N10KRQ8 MTB050N15ARJ3 MTB050N15BRH8 MTB050N15BRQ8 MTB050N15BRV8 MTB001

📌 All Tags

MTB050P10J3 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

Cystech Electonics MTB050P10J3-like datasheet