* RDS(ON)@VGS=-4.5V, ID=-12A
* Single Drive Requirement
* Low On-resistance
* Fast switching Characteristic
* Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) G：Gate D：Drain S：
MTB050P10J3 Datasheet (345.78 KB)
MTB050P10J3
Cystech Electonics
345.78 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P.
📁 Related Datasheet
MTB050P10E3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB050P10F3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB050P10H8 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB050N10KRQ8 N-Channel Power MOSFET (CYStech)
MTB050N15ARJ3 N-Channel Power MOSFET (CYStech)
MTB050N15BRH8 N-Channel Power MOSFET (CYStech)
MTB050N15BRQ8 N-Channel Power MOSFET (CYStech)
MTB050N15BRV8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB050N15J3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB05N03HQ8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
