MTB050P10J3 - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB050P10J3
Manufacturer	Cystech Electonics
File Size	345.78 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB050P10J3-CystechElectonics.pdf

RDS(ON)@VGS=-4.5V, ID=-12A.
Single Drive Requirement.
Low On-resistance.
Fast switching Characteristic.
Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB050P10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS.

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Published: Sep 4, 2016 |