* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=3.4A RDSON(TYP) VGS=4.5V, ID=3.3A 150V 12.4A 4.3A 47.5mΩ 53mΩ Equivalent Circuit MTB050N15BR
MTB050N15BRV8 Datasheet (703.47 KB)
MTB050N15BRV8
CYStech
703.47 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB050N15BRV8
Spec. No. : C033V8 Issued Date : 2017.08.21 Revised Date : 2020.02.25.
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