* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol MTB050P10H8 G：Gate D：Drain S：Source Outline Pin 1
MTB050P10H8 Datasheet (550.63 KB)
MTB050P10H8
Cystech Electonics
550.63 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 1/11
P-Channel Enhancement Mode Power MOSFET
MTB050P.
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