MTB050P10H8 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C975H8 Issued Date : 2016.08.01 Revised Date : Page No.: 1/11 P-Channel Enhancement Mode Power MOSFET MTB050P.

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Datasheet Specifications

Part number: MTB050P10H8
Manufacturer: Cystech Electonics
File Size: 550.63 KB
Datasheet: MTB050P10H8-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol MTB050P10H8 G：Gate D：Drain S：Source Outline Pin 1

MTB050P10H8 Distributors

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MTB050P10H8 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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