* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package Symbol MTB050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB050P10E3-0-UB-S Package TO-220 (Pb-free lead plat
MTB050P10E3 Datasheet (272.81 KB)
MTB050P10E3
Cystech Electonics
272.81 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C975E3 Issued Date : 2014.07.10 Revised Date : Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB050P.
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