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MTB060N06I3 N-Channel Enhancement Mode Power MOSFET

MTB060N06I3 Description

CYStech Electronics Corp.Spec.No.: C708I3 Issued Date : 2014.04.30 Revised Date : 2015.05.05 Page No.: 1/8 N -Channel Enhancement Mode Power MOS.

MTB060N06I3 Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating and halogen-free package Equivalent Circuit MTB060N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060N06I3-0-UA-G TO-251 (Pb-free lead plating and

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Datasheet Details

Part number
MTB060N06I3
Manufacturer
CYStech
File Size
344.96 KB
Datasheet
MTB060N06I3-CYStech.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech
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