* VGS=-10V, ID=-5.2A RDSON(TYP) VGS=-4.5V, ID=-5A
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package -150V -23A -5.9A 56mΩ 60mΩ Symbol MTB060P15H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：Source Ordering
MTB060P15H8 Datasheet (626.25 KB)
MTB060P15H8
CYStech
626.25 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2020.02.04 Page No. : 1/10
P-Channel Enhancement Mode Power MOS.
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