MTB060P15H8 P-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C960H8 Issued Date : 2014.10.30 Revised Date : 2020.02.04 Page No.: 1/10 P-Channel Enhancement Mode Power MOS.

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Datasheet Specifications

Part number: MTB060P15H8
Manufacturer: CYStech
File Size: 626.25 KB
Datasheet: MTB060P15H8-CYStech.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VGS=-10V, ID=-5.2A RDSON(TYP) VGS=-4.5V, ID=-5A
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package -150V -23A -5.9A 56mΩ 60mΩ Symbol MTB060P15H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：Source Ordering

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MTB060P15H8 P-Channel Enhancement Mode Power MOSFET CYStech

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