* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package RDSON@VGS=-4.5V, ID=-6A 63 mΩ(typ.) Equivalent Circuit MTB060P06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060P06I3-0-UA-G TO-251 (Pb
MTB060P06I3 Datasheet (583.99 KB)
MTB060P06I3
CYStech
583.99 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C796I3 Issued Date : 2019.03.25 Revised Date : Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB060P0.
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