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MTB060P06I3 P-Channel Enhancement Mode Power MOSFET

MTB060P06I3 Description

CYStech Electronics Corp.Spec.No.: C796I3 Issued Date : 2019.03.25 Revised Date : Page No.: 1/8 P-Channel Enhancement Mode Power MOSFET MTB060P0.

MTB060P06I3 Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package RDSON@VGS=-4.5V, ID=-6A 63 mΩ(typ. ) Equivalent Circuit MTB060P06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060P06I3-0-UA-G TO-251 (Pb

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Datasheet Details

Part number
MTB060P06I3
Manufacturer
CYStech
File Size
583.99 KB
Datasheet
MTB060P06I3-CYStech.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTB060P06I3-like datasheet