MTB060P06I3 Datasheet - CYStech

MTB060P06I3 P-Channel Enhancement Mode Power MOSFET

MTB060P06I3 Features

* Low Gate Charge

* Simple Drive Requirement

* Pb-free lead plating & Halogen-free package RDSON@VGS=-4.5V, ID=-6A 63 mΩ(typ.) Equivalent Circuit MTB060P06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060P06I3-0-UA-G TO-251 (Pb

MTB060P06I3 Datasheet (583.99 KB)

MTB060P06I3 Datasheet Preview — Preview of MTB060P06I3 PDF

Datasheet Details

Part number:

MTB060P06I3

Manufacturer:

CYStech

File Size:

583.99 KB

Description:

P-channel enhancement mode power mosfet.

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MTB060P06I3 P-Channel Enhancement Mode Power MOSFET CYStech

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