MTB060P06I3 P-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C796I3 Issued Date : 2019.03.25 Revised Date : Page No.: 1/8 P-Channel Enhancement Mode Power MOSFET MTB060P0.

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Datasheet Specifications

Part number: MTB060P06I3
Manufacturer: CYStech
File Size: 583.99 KB
Datasheet: MTB060P06I3-CYStech.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package RDSON@VGS=-4.5V, ID=-6A 63 mΩ(typ. ) Equivalent Circuit MTB060P06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060P06I3-0-UA-G TO-251 (Pb

MTB060P06I3 Distributors

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MTB060P06I3 P-Channel Enhancement Mode Power MOSFET CYStech

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