MTB06N03J3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec.No.: C441J3 Issued Date : 2009.03.02 Revised Date : Page.

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Datasheet Specifications

Part number: MTB06N03J3
Manufacturer: Cystech Electonics
File Size: 378.25 KB
Datasheet: MTB06N03J3_CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* BVDSS ID RDS(ON) 30V 80A 6mΩ
* 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package & Halogen-free package Symbol MTB06N03J3

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB06N03J3 CYStek Product Specification

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MTB06N03J3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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