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MTB06N03J3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

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Datasheet Details

Part number	MTB06N03J3
Manufacturer	Cystech Electonics
File Size	378.25 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB06N03J3_CystechElectonics.pdf

MTB06N03J3 Product details

Features

BVDSS ID RDS(ON) 30V 80A 6mΩ.
100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH.
Simple Drive Requirement.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
RoHS compliant package & Halogen-free package Symbol MTB06N03J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Curr.

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Published: Mar 9, 2010 |