MTBC7N10K3 - N-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Part number	MTBC7N10K3
Manufacturer	CYStech
File Size	712.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTBC7N10K3-CYStech.pdf

Lower gate charge.
ESD protected gate.
Pb-free lead plating and Halogen-free package. BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@VGS=4.5V, ID=1A RDSON(TYP)@VGS=4V, ID=1A 100V 1A 389mΩ 413mΩ 407mΩ Equivalent Circuit MTBC7N10K3 Outline TO-92L G：Gate S：Source D：Drain SDG Ordering Information Device MTBC7N10K3-0-TB-G MTBC7N10K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-fr.

📁 MTBC7N10K3 Similar Datasheet

Other Datasheets by CYStech

Published: Apr 3, 2020 |