Datasheet4U Logo Datasheet4U.com

MTBC7N10K3 Datasheet - CYStech

MTBC7N10K3 N-Channel Enhancement Mode Power MOSFET

MTBC7N10K3 Features

* Lower gate charge.

* ESD protected gate.

* Pb-free lead plating and Halogen-free package. BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@VGS=4.5V, ID=1A RDSON(TYP)@VGS=4V, ID=1A 100V 1A 389mΩ 413mΩ 407mΩ Equivalent Circuit MTBC7N10K3 Outline TO-92L G：

MTBC7N10K3 Datasheet (712.47 KB)

Preview of MTBC7N10K3 PDF
MTBC7N10K3 Datasheet Preview Page 2 MTBC7N10K3 Datasheet Preview Page 3

Datasheet Details

Part number:

MTBC7N10K3

Manufacturer:

CYStech

File Size:

712.47 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

MTBC7N10N3 N-Channel Enhancement Mode Power MOSFET (CYStech)

MTB METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)

MTB-F000329MNHNAA-B LCD Module (Microtips)

MTB-F000368MNHNAA LCD Module (Microtips)

MTB001 High Output Interface Driver ICs (Shindengen Electric)

MTB001D01-1 LCD Module (CSOT)

MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)

MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)

TAGS

MTBC7N10K3 N-Channel Enhancement Mode Power MOSFET CYStech

MTBC7N10K3 Distributor