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MTBC7N10K3 N-Channel Enhancement Mode Power MOSFET

MTBC7N10K3 Description

CYStech Electronics Corp.Spec.No.: C886K3 Issued Date : 2018.06.13 Revised Date : Page No.: 1/10 100V N-Channel Enhancement Mode MOSFET MTBC7N1.

MTBC7N10K3 Features

* Lower gate charge.
* ESD protected gate.
* Pb-free lead plating and Halogen-free package. BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@VGS=4.5V, ID=1A RDSON(TYP)@VGS=4V, ID=1A 100V 1A 389mΩ 413mΩ 407mΩ Equivalent Circuit MTBC7N10K3 Outline TO-92L G：

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Datasheet Details

Part number
MTBC7N10K3
Manufacturer
CYStech
File Size
712.47 KB
Datasheet
MTBC7N10K3-CYStech.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTBC7N10K3-like datasheet