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2N5109
SILICON NPN RF TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=75°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
40 20 3.0 400 400 1.0 2.5 -65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICEV
VCE=35V, VBE=1.5V
ICEV
VCE=15V, VBE=1.