2N858
335.81kb
(2n8xx) pnp metal can.
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2N85 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N85
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-.
2N859 - (2N8xx) PNP Metal Can
(Central Semiconductor)
..
..
..
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2N80 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N80
·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag.
2N80 - 800V N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80
2.4A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.
2N80-C - 800V NHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N80-C
2.0A, 800V NHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.
2N80K5 - N-channel Power MOSFET
(STMicroelectronics)
STL2N80K5
N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package
Datasheet - production data
Features
1 2 3 4
P.
2N80Z - 800V N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2N80Z
Preliminary
2A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80Z is an N-channel mode power MOSFET usi.
2N827 - PNP germanium mesa transistor
(Motorola)
2N827 (GERMANIUM)
CASE 22
(TO.18)
PNP germanium mesa transistor for high-speed switching applica.tions.
MAXIMUM RATINGS
Rating
ColleCtor..Sase Volt.
2N828 - PNP germanium epitaxial mesa transistor
(Motorola)
2N828 (GERMANIUM)
CASE 22
(TO·1S)
Collector
connected to cas.
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM.
2N828A - PNP germanium epitaxial mesa transistors
(Motorola)
2N828 (continued)
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
DYNAMIC.CHAI ACTERISTICS
Symbol Min Typ
Current-Gain ,. Bandwldth Produ.
