Part number: 2N80
Manufacturer: Inchange Semiconductor
File Size: 62.16KB
Download: 📄 Datasheet
Description: N-Channel MOSFET Transistor
*Drain Current ID= 2.4A@ TC=25℃
*Drain Source Voltage-
: VDSS= 800V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 7.0Ω(Max)
*Fast Switching
*APP.
*Switching power supplies,converters,AC and DC motor controls
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME.
Image gallery
TAGS
📁 Related Datasheet
2N80 - 800V N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80
2.4A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.
2N80-C - 800V NHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N80-C
2.0A, 800V NHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.
2N80K5 - N-channel Power MOSFET
(STMicroelectronics)
STL2N80K5
N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package
Datasheet - production data
Features
1 2 3 4
P.
2N80Z - 800V N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2N80Z
Preliminary
2A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80Z is an N-channel mode power MOSFET usi.
2N827 - PNP germanium mesa transistor
(Motorola)
2N827 (GERMANIUM)
CASE 22
(TO.18)
PNP germanium mesa transistor for high-speed switching applica.tions.
MAXIMUM RATINGS
Rating
ColleCtor..Sase Volt.
2N828 - PNP germanium epitaxial mesa transistor
(Motorola)
2N828 (GERMANIUM)
CASE 22
(TO·1S)
Collector
connected to cas.
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM.
2N828A - PNP germanium epitaxial mesa transistors
(Motorola)
2N828 (continued)
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
DYNAMIC.CHAI!ACTERISTICS
Symbol Min Typ
Current-Gain ....,. Bandwldth Produ.
2N829 - PNP germanium epitaxial mesa transistors
(Motorola)
2N828 (continued)
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
DYNAMIC.CHAI!ACTERISTICS
Symbol Min Typ
Current-Gain ....,. Bandwldth Produ.
2N834 - NPN HIGH SPEED SATURATED LOGIC SWITCHES
(New Jersey Semi-Conductor)
Free Datasheet http://www.datasheet4u.net/
.
2N834 - NPN silicon epitaxial transistors
(Motorola)
834 2N
(SILICON)
2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \
(TO·18)
Collector connected to case
MA.