2N80 Datasheet, transistor equivalent, Inchange Semiconductor

PDF File Details

Part number: 2N80

Manufacturer: Inchange Semiconductor

File Size: 62.16KB

Download: 📄 Datasheet

Description: N-Channel MOSFET Transistor

Datasheet Preview: 2N80 📥 Download PDF (62.16KB)

2N80 Features and benefits


*Drain Current ID= 2.4A@ TC=25℃
*Drain Source Voltage- : VDSS= 800V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max)
*Fast Switching
*APP.

2N80 Application


*Switching power supplies,converters,AC and DC motor controls
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

Image gallery

Page 2 of 2N80

TAGS

2N80
N-Channel
MOSFET
Transistor
Inchange Semiconductor

📁 Related Datasheet

2N80 - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80 2.4A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.

2N80-C - 800V NHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N80-C 2.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.

2N80K5 - N-channel Power MOSFET (STMicroelectronics)
STL2N80K5 N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet - production data Features 1 2 3 4 P.

2N80Z - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET usi.

2N827 - PNP germanium mesa transistor (Motorola)
2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium mesa transistor for high-speed switching applica.tions. MAXIMUM RATINGS Rating ColleCtor..Sase Volt.

2N828 - PNP germanium epitaxial mesa transistor (Motorola)
2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas. PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM.

2N828A - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Bandwldth Produ.

2N829 - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Bandwldth Produ.

2N834 - NPN HIGH SPEED SATURATED LOGIC SWITCHES (New Jersey Semi-Conductor)
Free Datasheet http://www.datasheet4u.net/ .

2N834 - NPN silicon epitaxial transistors (Motorola)
834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collector connected to case MA.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts