2N834
New Jersey Semi-Conductor
156.19kb
Npn high speed saturated logic switches.
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2N834 - NPN silicon epitaxial transistors
(Motorola)
834 2N
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2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \
(TO·18)
Collector connected to case
MA.
2N835 - NPN silicon epitaxial transistors
(Motorola)
834 2N
(SILICON)
2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \
(TO·18)
Collector connected to case
MA.
2N838 - PNP germanium epitaxial mesa transistor
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CASE 22 (TO·18) Collector connected to CBse
PNP germanium epitaxial mesa transistor for highspeed switching applications.
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2N80 - N-Channel MOSFET Transistor
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
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·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag.
2N80 - 800V N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80
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The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.
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(STMicroelectronics)
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Datasheet - production data
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1 2 3 4
P.
2N80Z - 800V N-CHANNEL POWER MOSFET
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2N827 - PNP germanium mesa transistor
(Motorola)
2N827 (GERMANIUM)
CASE 22
(TO.18)
PNP germanium mesa transistor for high-speed switching applica.tions.
MAXIMUM RATINGS
Rating
ColleCtor..Sase Volt.
2N828 - PNP germanium epitaxial mesa transistor
(Motorola)
2N828 (GERMANIUM)
CASE 22
(TO·1S)
Collector
connected to cas.
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM.