2N834 Datasheet, switches equivalent, New Jersey Semi-Conductor

PDF File Details

Part number:

2N834

Manufacturer:

New Jersey Semi-Conductor

File Size:

156.19kb

Download:

📄 Datasheet

Description:

Npn high speed saturated logic switches.

Datasheet Preview: 2N834 📥 Download PDF (156.19kb)

TAGS

2N834
NPN
HIGH
SPEED
SATURATED
LOGIC
SWITCHES
New Jersey Semi-Conductor

📁 Related Datasheet

2N834 - NPN silicon epitaxial transistors (Motorola)
834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collector connected to case MA.

2N835 - NPN silicon epitaxial transistors (Motorola)
834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collector connected to case MA.

2N838 - PNP germanium epitaxial mesa transistor (Motorola)
2N838 (GERMANIUM) CASE 22 (TO·18) Collector connected to CBse PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIM.

2N80 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N80 ·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag.

2N80 - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80 2.4A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.

2N80-C - 800V NHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N80-C 2.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.

2N80K5 - N-channel Power MOSFET (STMicroelectronics)
STL2N80K5 N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet - production data Features 1 2 3 4 P.

2N80Z - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET usi.

2N827 - PNP germanium mesa transistor (Motorola)
2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium mesa transistor for high-speed switching applica.tions. MAXIMUM RATINGS Rating ColleCtor..Sase Volt.

2N828 - PNP germanium epitaxial mesa transistor (Motorola)
2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas. PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts