2N85 Datasheet, Transistor, Inchange Semiconductor

✔ 2N85 Features

Drain Current ID= 2A@ TC=25℃
Drain Source Voltage- : VDSS= 850V(Min)
Static Drain-Source On-Resistance : RDS(on) = 8.0Ω(Max)
Fast Switching
APPLICATIONS
Switching p

✔ 2N85 Application

Switching power supplies,converters,AC and DC motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA

PDF File Details

Part number:

2N85

Manufacturer:

Inchange Semiconductor

File Size:

62.12kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

📥 Download PDF (62.12kb)

📁 Related Datasheet

2N80 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N80 ·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag.

2N80 - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80 2.4A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.

2N80-C - 800V NHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N80-C 2.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.

2N80K5 - N-channel Power MOSFET (STMicroelectronics)
STL2N80K5 N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet - production data Features 1 2 3 4 P.

2N80Z - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET usi.

2N827 - PNP germanium mesa transistor (Motorola)
2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium mesa transistor for high-speed switching applica.tions. MAXIMUM RATINGS Rating ColleCtor..Sase Volt.

2N828 - PNP germanium epitaxial mesa transistor (Motorola)
2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas. PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM.

2N828A - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI ACTERISTICS Symbol Min Typ Current-Gain ,. Bandwldth Produ.

2N829 - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI ACTERISTICS Symbol Min Typ Current-Gain ,. Bandwldth Produ.

2N834 - NPN HIGH SPEED SATURATED LOGIC SWITCHES (New Jersey Semi-Conductor)
Free Datasheet http://..net/ .

Stock and price

Diodes Incorporated

IC VREF SHUNT 2% 8SOP

DigiKey

ZR40402N850TA

0 In Stock

Qty : 12500 units

Unit Price : $0.5

🛒 Buy Now

TAGS

2N85 N-Channel MOSFET Transistor Inchange Semiconductor

Since 2006. D4U Semicon. Datasheet4U.com Contact Us Privacy Policy Purchase of parts