2N80K5 Datasheet, mosfet equivalent, STMicroelectronics

PDF File Details

Part number: 2N80K5

Manufacturer: STMicroelectronics (https://www.st.com/)

File Size: 0.99MB

Download: 📄 Datasheet

Description: N-channel Power MOSFET

Datasheet Preview: 2N80K5 📥 Download PDF (0.99MB)

2N80K5 Features and benefits

1 2 3 4 PowerFLAT™ 5x6 VHV Order code STL2N80K5 VDS 800 V RDS(on)max. 4.5 Ω
* Industry’s lowest RDS(on)
* Industry’s best figure of merit (FoM)
* Ultra l.

2N80K5 Application


* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

2N80K5 Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring super.

Image gallery

Page 2 of 2N80K5 Page 3 of 2N80K5

TAGS

2N80K5
N-channel
Power
MOSFET
STMicroelectronics

📁 Related Datasheet

2N80 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N80 ·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag.

2N80 - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80 2.4A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.

2N80-C - 800V NHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N80-C 2.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.

2N80Z - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET usi.

2N827 - PNP germanium mesa transistor (Motorola)
2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium mesa transistor for high-speed switching applica.tions. MAXIMUM RATINGS Rating ColleCtor..Sase Volt.

2N828 - PNP germanium epitaxial mesa transistor (Motorola)
2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas. PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM.

2N828A - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Bandwldth Produ.

2N829 - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ....,. Bandwldth Produ.

2N834 - NPN HIGH SPEED SATURATED LOGIC SWITCHES (New Jersey Semi-Conductor)
Free Datasheet http://www.datasheet4u.net/ .

2N834 - NPN silicon epitaxial transistors (Motorola)
834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collector connected to case MA.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts