2N80K5 Datasheet - STMicroelectronics

2N80K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code.

2N80K5 Features

* 1 2 3 4 PowerFLAT™ 5x6 VHV Order code STL2N80K5 VDS 800 V RDS(on)max. 4.5 Ω

* Industry’s lowest RDS(on)

* Industry’s best figure of merit (FoM)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected ID 1.5 A Figure 1. Internal schematic diagr

2N80K5-STMicroelectronics.pdf