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2N829, 2N828A Datasheet - Motorola

2N829 PNP germanium epitaxial mesa transistors

2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ,. Bandwldth Product (IC = 10 mAde, VCE = 1 Vile, f = 100 MHz) fT 300 400 Output CapaCitance (VCB = 10 Vde, ~ = 0) Cob - 3.5 Small Signal Current Gain (IC = 10 mAde, VCE = 1 Vde, f = 100 MHz) hfe 3 4.0 Delay Plus Rise Time (Figure 1) td + tr - 50 Storage Time (Figure 1) Fall Time (Figure 1) Charge Storage Time Constant (Figure 2) Rise Time (FiguI'e.3) St.

2N828A-Motorola.pdf

This datasheet PDF includes multiple part numbers: 2N829, 2N828A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N829, 2N828A

Manufacturer:

Motorola

File Size:

189.52 KB

Description:

Pnp germanium epitaxial mesa transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N829, 2N828A.
Please refer to the document for exact specifications by model.

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2N829 2N828A PNP germanium epitaxial mesa transistors Motorola

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