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2N829, 2N828A - PNP germanium epitaxial mesa transistors

2N829 Description

2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Min Typ Current-Gain ,.Bandwldth Product (.

2N829 Applications

* Rating Collector to Base Voltage Symbol Value Unit Vce 15 Vdc Collector to Emitter Voltage VCES 15 Vdc Emitter to Base Voltage VEB 2.5 Vdc Collector Current (ContinUous) IC 200 mAdc Total Device Dissipation at 25"C case PD 300 mW Temperature (Derate 4. Omw;oC above 25
* C)

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This datasheet PDF includes multiple part numbers: 2N829, 2N828A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2N829, 2N828A
Manufacturer
Motorola
File Size
189.52 KB
Datasheet
2N828A-Motorola.pdf
Description
PNP germanium epitaxial mesa transistors
Note
This datasheet PDF includes multiple part numbers: 2N829, 2N828A.
Please refer to the document for exact specifications by model.

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PNP germanium epitaxial mesa transistors Motorola
Motorola 2N829-like datasheet

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