2N838 Datasheet (Motorola) - PNP germanium epitaxial mesa transistor

2N838, PNP germanium epitaxial mesa transistor

2N838 (GERMANIUM) " CASE 22 (TO 18) Collector connected to CBse PNP germanium epitaxial mesa transistor for highspeed switching applications.

MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage .

VCB 30 Vdc VCES 30 Vdc VCEX 15 Vdc Emitter-Base Boltage Collector Current (Continuous) Junction Temperature Storage Temperature Device Dissipation @TA =250 C (Derate 2mW/oC above 250 C) VEB 2.5 Vdc Ie 100 mAdc TJ