2N835
Motorola
112.12 KB
Npn silicon epitaxial transistors.
834 2N
(SILICON)
2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22
(TO
*18)
Collector connected to case
.
📁 Related Datasheet
2N834 - NPN HIGH SPEED SATURATED LOGIC SWITCHES
(New Jersey Semi-Conductor)
Free Datasheet http://..net/
.
2N834 - NPN silicon epitaxial transistors
(Motorola)
834 2N
(SILICON)
2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \
(TO·18)
Collector connected to case
MA.
2N838 - PNP germanium epitaxial mesa transistor
(Motorola)
2N838 (GERMANIUM)
CASE 22 (TO·18) Collector connected to CBse
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIM.
2N80 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N80
·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag.
2N80 - 800V N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80
2.4A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance.
2N80-C - 800V NHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N80-C
2.0A, 800V NHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.
2N80K5 - N-channel Power MOSFET
(STMicroelectronics)
STL2N80K5
N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package
Datasheet - production data
Features
1 2 3 4
P.
2N80Z - 800V N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2N80Z
Preliminary
2A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80Z is an N-channel mode power MOSFET usi.
