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CEM4412S1, CEM4412S1_Chino - N-Channel Enhancement Mode Field Effect Transistor

CEM4412S1 Description

CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor .

CEM4412S1 Features

* 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Dr

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: CEM4412S1, CEM4412S1_Chino. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
CEM4412S1, CEM4412S1_Chino
Manufacturer
Chino-Excel Technology
File Size
51.78 KB
Datasheet
CEM4412S1_Chino-ExcelTechnology.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: CEM4412S1, CEM4412S1_Chino.
Please refer to the document for exact specifications by model.

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N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
Chino-Excel Technology CEM4412S1-like datasheet

CEM4412S1 Stock/Price