MXD30N80 - N-Channel Enhancement Mode Power MOSFET
MXD30N80 Features
* D
* VDS =30V，ID =80A
* RDS(ON)(Typ.)4.6mΩ @ Vgs=10V
* RDS(ON)(Typ.)6mΩ @ Vgs=4.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS k
* Excellent package
