* Package
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
C2M0045170P Datasheet (968.44 KB)
C2M0045170P
Cree
968.44 KB
Silicon carbide power mosfet.
VDS 1700 V C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .
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