C2M0045170P Datasheet, Mosfet, Cree

C2M0045170P Features

• Mosfet Package
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High Blocking Voltage with Low On-Resistan

PDF File Details

Part number:

C2M0045170P

Manufacturer:

Cree

File Size:

968.44kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

C2M0045170P Application

• Applications
• 1500V Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Pulsed Power

TAGS

C2M0045170P

Cree

📁 Related Datasheet

C2M0045170D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0045170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • High blo.

C2M0045170D - Silicon Carbide Power MOSFET (Cree)
VDS 1700 V C2M0045170D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .

C2M0045170P - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • Optimize.

C2M0040120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0040120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .

C2M0040120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Fe.

C2M0025120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0025120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .

C2M0025120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0025120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 63 A 25 mΩ N-Channel Enhancement Mode Fe.

C2M0080120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C2M0080120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 36 A 80 mΩ N-Channel Enhancement Mode Fe.

C2M0080120D - Silicon Carbide Power MOSFET (Wolfspeed)
C2M0080120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance •.

C2M0080170P - Silicon Carbide Power MOSFET (Cree)
VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode .